Silicon Sublimation Source-SUSI

The Silicon Sublimation Source SUSI was developed for growing thin Si layers, short period Si/Ge superlattices and Si / SiGe heterostructures, but it is also an excellent Si dopant source in III-V semiconductors.

The SUSI allows growth of high crystal quality thin epitaxial Si layers not otherwise possible with PBN crucible effusion cells. It is also an ideal alternative to e-beam evaporators, wherever highest purity, stable flux and low flux rates are required.

Features:

Growth of thin Si layers
Si doping in III-V MBE, with fast and precise flux control
Ultra high purity silicon filament
Water cooled electrical contacts
Inner f lament shielding with Si parts
Low power consumption