PLD / Laser MBE System

Pulsed Laser Deposition-PLD

TSST Pulsed Laser Deposition systems for thin film growth are state-of-the-art, highly flexible PLD systems for thin film research, ideally suited and field proven for research on a large variety of materials including complex oxides.

PLD working Principle：

System Characteristics：

• Thin film growth of highest quality complex materials

• Fully customized design, including adaptation to a specific lab layout

• Remote support, service and on site training by TSST engineers

• <10^-7 mbar base pressure

• Up to 1000°C growth temperature

• Up to 6 targets for heterostructure growth

Laser Molecular Beam Epitaxy-LMBE

TSST Advanced Pulsed Laser Deposition systems with in situ RHEED are state-of- the-art, highly flexible PLD systems for thin film research at atomic level, ideally suited and field proven for research on a large variety of materials including complex oxides.

System Characteristics：

• Thin film growth of highest quality complex materials

• Single monolayer growth control with RHEED

• Fully customised design, including adaptation to a specific lab layout

• Remote support, service and on site training by TSST engineers

• Down to 5.0x10^-10 mbar base pressure

• Up to 1200°C growth temperature

• Up to 6 odd shaped targets for heterostructure growth

LMBE System

Application：

Epitaxy growth（SrTiO₃，LaAlO₃）

Piezoelectrial thin film（PZT，AlN，BiFeO₃，BaTiO₃）

Ferroelectrical thin film（BaTiO₃，KH₂PO₄）

Pyroelectrical thin film（SrTiO₃）

Metal and Ionic contdutive thin film（Ti，Ag，Au，Pt，Ni，Co，SrRuO₃，LaNiO₃，YZrO₂，GdCeO₂，LaSrCoFeO₃）

Semiconductor thin film（Zn(Mg)O，AlN，SrTiO₃）

High K dielectrics（HfO₂，CeO₂，Al2O₃，BaTiO₃，SrTiO₃，PbZrTiO₃，LaAlO₃，Ta₂O₅）

Superconducting thin film（YBa₂CuO_7-x，BiSrCaCuO）

Optical waveguide，optical thin film（PZT，AlN，BaTiO₃，Al₂O₃，ZrO₂，TiO₂）

Superhydrophobic thin film（PTFE）

IR-detection thin film（V₂O₅，PZT）

Epitaxy Growth