Doping applications in MBE growth however require only low quantities of dopant material. Therefore, compact effusion cells with small crucible capacities and low flux rates, but wide angled flux distribution are needed. A typical doping flux is about 3 to 5 orders of magnitude smaller than a typical growth material flux.
The Doping Effusion Cells DEZ with conical crucibles provide low power consumption, while producing excellent doping uniformities. For example, a doping level uniformity of about 1% on a 3" substrate at a distance of 150mm is reached with crucibles having a tapering angle of 10%. DEZ cells can be used as doping source for various materials like e.g. Si, Be, Ga or In.
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