The VGCS is designed for growth of phosphide compounds in III-V-MBE. It has been readily approved in industrial applications. The fast and reproducible flux control using a valve allows the growth of phosphide-arsenide heterostructures with very sharp interfaces like quantum wells and superlattices. It is perfectly suited for applications in HEMTs, HBTs, GaAlInP laser diodes and other devices. GaInP/InP quantum dot lasers have been prepared. The large crucible size makes the VGCS well suited for MBE research and production systems
Features:
Produces pure P2 species (P2 / P4>150)
Large crucible capacity of 420 cc
Reliable large cross-section cone valve
Fast, stable and reproducible flux control
Safe cell loading and operation
No hot cracker zone
Injector length and flux distribution
adjustable to ft most MBE systems
Contact: Nana Zhang
Phone: 18201230727
Tel: 010-80698356
Email: Info@be-instruments.com
Add: Room 1310, AirChina Plaza, No. 36 Xiaoyun Road, Chaoyang District, Beijing