Pulsed Laser Deposition (PLD)

Pulsed Laser Deposition (PLD) is a technology that uses laser to bombard a target and deposits the bombarded plasma on the substrate to grow thin films.

On the target surface, under a sufficiently high energy density and a sufficiently short pulse time, the target absorbs the laser energy and causes the temperature at the spot to rapidly rise above the evaporation temperature of the target, causing the target to evaporate into regionalized High-temperature and high-density plasma, under the continued action of the laser beam, the temperature and pressure of the plasma rapidly increase, and then bombard the surface of the substrate to deposit a thin film.

Features

1. Composite materials with complex chemical compositions can be fully identically coated, and it is easy to ensure the stability of the stoichiometric ratio after coating. The greatest advantage of PLD is that it is easily consistent with the composition of the target material, and it is the main sign that distinguishes it from other technologies. ;

2. The deposition rate is high, the test cycle is short, the substrate temperature requirement is low, and the prepared film is uniform;

3. It has strong directionality, high film resolution, and can achieve micro-area deposition;

4. The process parameters can be adjusted arbitrarily, and there are no restrictions on the types of target materials;

5. Process gases can be introduced in situ during the growth process, and active or inert and mixed gases can be introduced to improve film quality;

6. Easy to grow multi-layer films and heterogeneous films, especially heterostructures of multi-component oxides;

7. In a high vacuum environment, plume evaporates and deposits only in local areas, causing little pollution to the vacuum cavity.

application

Pulsed laser deposition technology is widely used. Except for materials that are transparent to this laser, almost all materials can be grown using PLD. It can be used to prepare thin films of various materials such as metals, semiconductors, oxides, nitrides, carbides, borides, silicides, sulfides, and fluorides. It can even be used to prepare films of some materials that are difficult to synthesize, such as diamond and cubic nitrogen. Chemical film, etc.