Semiconductor micro nano device simulation software
Product Description: nextnano++is a simulation software specifically designed for quantum devices, which can be used to solve Schr ö dinger Poisson currents, simulate quantum wells, quantum wires, quantum dots, etc.
Nextnano++can run on the visual software interface Nextnanomat, which is a software platform that can graphically organize, manage, and submit simulation tasks for input files (ASCII, XML...) and output files. It can handle multiple tasks in parallel and simultaneously (under the condition that computer multi-core requirements are met).
Nextnanomat can run the following software:
Nextnano3
Nextnano++
Nextnano MSB
Nextnano QCL
He can also be used to read various TCAD or research software, and can convert binary data into quantifiable 1D, 2D, and 3D results. The development purpose of this software platform is to enable faster display of simulation results.
Nextnano++software features:
-Rich material library information including IV group materials (Si, Ge, SiGe) and all III-V group materials, as well as their ternary or quaternary compound materials
-Nitride materials with sphalerite and wurtzite structures;
-Devices that can simulate any geometric structure (1D, 2D, and 3D)
-Quantum mechanism electronic devices based on the 8-band k.p model
-Can simulate strain, piezoelectric, and pyroelectric effects
-Materials with growth directions along [001], [011], [111], [211], in short, can simulate various lattice orientations
-Equilibrium and non-equilibrium systems, calculating near equilibrium current (semi classical l)
-Can simulate magnetic field
-Contains rich simulation examples that users can easily apply
Partial application results:
Application tutorial example:
1D SiGe
1D doped Semiconductors
1D Tight-binding bond structure
1D Tight-binding graphene
1D graphene (density)
1D Poisson
1D Triangular well
1D Parabolic QW
1D Double Quantum Well
1D DOS in a QW
1D LDOS
1D Quantum Confined Stark Effect
1D Exciton in QW
1D Schottky barrier
1D Schrödinger-Poisson
1D pn-junction
1D Transmission (NEGF)
1D QW (NEGF)
1D RTD (NEGF)
1D inverted HEMT
1D voltage sweep
1D piezo
1D piezo [111]
1D HEMT
1D AlAs QW crossover I
1D AlAs QW crossover II
1D QW k.p dispersion
1D deformation potentials
1D AlGaInP on GaAs
1D strain
1D strained substrate
1D wurtzite
1D AlGaN/GaN FET
1D bulk k.p dispersion in GaAs
1D bulk k.p dispersion in GaN
1D bulk k.p dispersion in II-VI
1D GaN/AlGaN QW dispersion
1D p-Si/SiO2/poly-Si/Gate
1D C-V curve of a MIS
1D Si/SiGe MODQW
1D strained silicon
1D Si inversion layer
1D strained Si MOS
1D Interband Transitions
1D QW optical absorption
1D QCL (simple)
1D Quantum Cascade Laser
1D Intraband Transitions
1D InGaAs MQWs
1D Scattering time
1D SL minibands
1D InAs/InGaSb SL (type-II)
1D InAs/GaSb BGQW (type-II)
1D full-band density bulk
1D full-band density SL
1D single-band vs. k.p
2D single-band vs. k.p
1D resistance in Si
1D nin Si resistor
1D Mobility in 2DEGs
1D Tandem solar cell
BIO-1D Gouy-Chapman
BIO-1D PMF
BIO-1D GaN/AlGaN electrolyte
BIO-1D Si/SiO2 electrolyte
BIO-1D Protein sensor
2D Quantum corral
2D Core-Shell nanowire
2D GaN nanowire
2D n / nin Si
2D DG MOSFET
2D DG MOSFET (QM)
2D TG MOSFET
2D QWR magnetic
2D T-shaped QWR
2D T-shaped strained QWR
2D Exciton in QWR
2D Landau levels
2D Fock-Darwin states
2D Fock-Darwin (ellipse)
2D coupled QWRs in magnetic field
2D The CBR method (Transmission)
3D cubic QD
3D artificial atom
3D artificial QD crystal
3D IB solar cell
3D pyramidal QD
3D hexagonal GaN QD (wurtzite)
3D QD molecule
3D exciton/biexciton in cubic QD
3D Nanocrystal
3D CEO QDs
3D SET
3D QD 6-band k.p
3D strain of GaN nanowire
3D CBR nanowire (Transmission)
Input file generator
