The OCTOPLUS 500 EBV MBE system was developed for the growth of high-quality Si/SiGe materials on a 4-inch Si substrate. It can also be upgraded to a 6-inch sample. The cavity can also be loaded with 2 electron beam evaporators and 8 beam sources, or loaded with gas ejection or surface treatment.
●MBE system for SiGe and other materials equipped with beam source and electron beam evaporation source
●Ideal Si/SiGe epitaxial growth or metal deposition
●The substrate can be 3, 4, or 6 inches
●Two large capacity electron gun source holes
●8 beam or gas source holes
● In situ characterization capability
●Easy to use and maintain
●Clean room assembly and testing
● Powerful MBE PhD expert support team
The electron beam generated by the electron gun can be detected by a fourth level mass spectrometer. The sample stage is heated with pyrolytic graphite or tungsten or tantalum heating wires. The OCTOPLUS 500 EBV MBE system is widely recognized as highly suitable for the research and production of growth applications in metals, magnetic materials, oxides, topological insulation materials, and Si/SiGe heterostructure materials.
The standard OCTOPLUS 500 EBV MBE has 10 radially distributed source holes, and we recommend 8 source holes for beam sources, sublimation sources, or related components. Two DN250CF sized source holes are used for electron beam evaporation guns, which can also be porous electron gun EBVM. The rapid vacuum injection chamber is equipped with a horizontal magnetic rod transmission system, which can easily transfer samples without damaging the vacuum of the MBE chamber. RHEED system can be equipped for in-situ monitoring of film growth status.
