OCTOPLUS-O 400

Chamber size: 450 mm ID, liquid nitrogen cooling screen (compatible with water cooling)
Background vacuum:<2x10-10 mbar
Sample size: up to 2 inches, downward compatible with small-sized samples
Source furnace flange: 9 × DN63CF, up to 12 pieces
Design features: Differential chamber design, ozone spray close to the substrate, separate differential extraction from the source furnace
Heater: Anti oxidation SiC heater, substrate temperature 850 ℃
Optional: CO2 laser heating, substrate temperature 1700 ℃
Application field: Oxides
Details

OCTOPLUSO 400 is an MBE system specifically designed for the growth of oxide thin films. By utilizing the principle of differential pumping, the heating source can grow oxide thin films in oxygen or ozone environments. Suitable for 2-inch wafers and small-sized samples below 2 inches. Vertical split cavity design can be used to assemble various source furnaces and achieve molecular beam epitaxial growth of different materials.

System features:


Strong differential suction, dual pressure zone design

● Ozone resistant SiC sample heater at high temperatures

● Ozone jet ring designed close to the sample stage

● Concentrated or non concentrated ozone sources

● In situ growth characterization

● Scalable source furnace design, without damaging vacuum refueling

9 MBE evaporative source CF flange ports, optional 3 out of quota

Compatible with multi crucible electron beam evaporation

We can provide different types of evaporation sources according to the requirements of all customers, including K-cell, electron beam evaporation sources, thermal cracking sources, valve cracking sources, gas cracking sources, etc. Quartz crystal oscillators, reflective high-energy electron diffraction (RHEED), or quadrupole mass spectrometers can be used to achieve in-situ monitoring of sample growth.


Phone:010-80698356  Email:Info@be-instruments.com    AD: Room 1208B, Block B, Building 1, Zhubang 2000 Business Center, No. 100, Balizhuangxili, Chaoyang District, Beijing

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