SH/SH-O substrate manipulators are used in standard III-V MBE, GaN MBE, SiC growth and SiGe MBE. Manipulators with tungsten heaters are applicable for the majority of high temperature applications. In III-V MBE tantalum wire heaters are usually recommended, while SiGe MBE requires pyrolytic graphite heaters. All heater concepts provide clean UHV growth conditions even at elevated operating temperatures up to 1200°C.
Heater type : tungsten wire (W), tantalum wire (T), pyrolytic graphite (G); (special heater materials like silicon carbide, platinum, pbn encapsulated on request)
Thermocouple : W5%Re/W26%Re (type C) (type K on request)
Wafer temperature : max. 900-1200°C (depending on heater material and application)
Bakeout temperature : 250°C
Electrical contacts : copper-free contacts for metal heaters; water-cooled contacts for graphite heaters
Linear travel : 25mm standard, 30-50mm on request
Options : integrated main shutter (S), electrically insulated wafer holder with additional feedthrough for
bias voltage (B), tantalum wafer holder (T)
Contact: Nana Zhang
Phone: 18201230727
Tel: 010-80698356
Email: Info@be-instruments.com
Add: Room 1310, AirChina Plaza, No. 36 Xiaoyun Road, Chaoyang District, Beijing